Gallium(II) sulfide
Ball and stick, cell model of gallium(II) sulfide | |
Names | |
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Other names
Gallium sulfide[citation needed]
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Identifiers | |
12024-10-1 | |
ChemSpider | 4898760 |
Jmol 3D model | Interactive image |
PubChem | 6370242 |
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Properties | |
GaS• | |
Molar mass | 101.788 g mol−1 |
Appearance | Yellow crystals |
Density | 3.86 g cm−3 |
Melting point | 965 °C (1,769 °F; 1,238 K) |
Structure | |
hexagonal, hP8 | |
P63/mmc, No. 194 | |
Related compounds | |
Related compounds
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Gallium(III) sulfide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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verify (what is ?) | |
Infobox references | |
Gallium(II) sulfide, GaS, is a chemical compound of gallium and sulfur. The normal form of gallium(II) sulfide as made from the elements has a hexagonal layer structure containing Ga24+ units which have a Ga-Ga distance of 248pm.[1] This layer structure is similar to GaTe, GaSe and InSe.[1] An unusual metastable form, with a distorted wurtzite structure has been reported as being produced using MOCVD. The metal organic precursors were di-tert-butyl gallium dithiocarbamates, for example GatBu2(S2CNMe2) and this was deposited onto GaAs. The structure of the GaS produced in this way is presumably Ga2+ S2−.[2]
Single layers of gallium sulfide are dynamically stable two-dimensional semiconductors, in which the valence band has an inverted Mexican-hat shape, leading to a Lifshitz transition as the hole-doping is increased.[3]
References
- ↑ 1.0 1.1 Lua error in package.lua at line 80: module 'strict' not found.
- ↑ MOCVD Growth of Gallium Sulfide Using Di-tert-butyl Gallium Dithiocarbamate Precursors: Formation of a Metastable Phase of GaS A. Keys, S G. Bott, A. R. Barron Chem. Mater., 11 (12), 3578 -3587, 1999. doi:10.1021/cm9903632
- ↑ Lua error in package.lua at line 80: module 'strict' not found.
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