Robert H. Dennard

Robert H. Dennard
Dr. Robert H. Dennard, IBM Fellow, beside his drawing of a DRAM cell (circuit schematic)
Notable awards	Harvey Prize (1990) IEEE Edison Medal (2001) IEEE Medal of Honor (2009) Kyoto Prize (2013)

Robert Dennard (born September 5, 1932) is an American electrical engineer and inventor.

Dennard was born in Terrell, Texas, U.S.. He received his B.S. and M.S. degrees in Electrical Engineering from Southern Methodist University, Dallas, in 1954 and 1956, respectively. He earned a Ph.D. from Carnegie Institute of Technology in Pittsburgh, Pennsylvania, in 1958. His professional career was spent as a researcher for International Business Machines.

In 1968, he invented dynamic random-access memory (DRAM). Dennard was also among the first to recognize the tremendous potential of downsizing MOSFETs. The scaling theory he and his colleagues formulated in 1974 postulated that MOSFETs continue to function as voltage-controlled switches while all key figures of merit such as layout density, operating speed, and energy efficiency improve – provided geometric dimensions, voltages, and doping concentrations are consistently scaled to maintain the same electric field. This property underlies the achievement of Moore's Law and the evolution of microelectronics over the last few decades.

Awards and honors

• Kyoto Prize (2013)
• Carnegie Mellon University Honorary Doctor of Science and Technology (2010)
• IEEE Medal of Honor (2009)
• IEEE Edison Medal (2001)
• Benjamin Franklin Medal in Electrical Engineering from The Franklin Institute (2007)
• U.S. National Academy of Engineering (NAE) Charles Stark Draper Prize (2009)
• Harvey Prize from Technion Institute in Haifa / Israel (1990)
• Industrial Research Institute (IRI) Achievement Award (1989)
• U.S. National Medal of Technology (1988)
• IEEE Cledo Brunetti Award (1982)
• appointed IBM Fellow (1979)

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