T-RAM
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Thyristor RAM (T-RAM) is a new (2009) type of DRAM computer memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high density and high speed. This technology, which exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor,[1] is used to create memory cells capable of very high packing densities. Due to this, the memory is highly scalable, and already has a storage density that is several times higher than found in conventional six-transistor SRAM memory. It was expected that the next generation of T-RAM memory will have the same density as DRAM.
References
- ↑ http://www.t-ram.com/technology/index.html Description of the technology
External links
- T-RAM Semiconductor
- T-RAM Description
- EE Times: GlobalFoundries to apply thyristor-RAM at 32-nm node
- Semiconductor International: GlobalFoundries Outlines 22 nm Roadmap
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