Boron phosphide
From Infogalactic: the planetary knowledge core
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| Identifiers | |
|---|---|
20205-91-8  |
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| PubChem | 88409 |
| Properties | |
| BP | |
| Molar mass | 41.7855 g/mol |
| Appearance | maroon powder |
| Density | 2.90 g/cm3 |
| Melting point | 1,100 °C (2,010 °F; 1,370 K) (decomposes) |
| Band gap | 2.1 eV (indirect, 300 K)[1] |
| Thermal conductivity | 4 W/(cm·K) (300 K) |
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Refractive index (nD)
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3.0 (0.63 µm)[1] |
| Structure | |
| Zinc blende | |
| F43m | |
| Tetrahedral | |
| Vapor pressure | {{{value}}} |
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Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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| Infobox references | |
Boron phosphide (BP) (also referred to as boron monophosphide, to distinguish it from boron subphosphide, B12P2) is a chemical compound of boron and phosphorus. It is a semiconductor.[2]
Contents
History
Crystals of boron phosphide were synthesized by Humphry Davy as early as in 1891.[3]
Appearance
Pure BP is almost transparent, n-type crystals are orange-red whereas p-type ones are dark red.[4]
Chemical properties
BP is not attacked by acids or boiling aqueous alkali water solutions. It is only attacked by molten alkalis.[4]
Physical properties
Some properties of BP are listed below:[1][4]
- lattice constant 0.45383 nm
- coefficient of thermal expansion 3.65×10−6 /°C (400 K)
- heat capacity CP ~ 0.8 J/(g·K) (300 K)
- Debye temperature = 985 K
- Bulk modulus 152 GPa
- relatively high microhardness of 32 GPa (100 g load).
- electron and hole mobilities of a few hundred cm2/(V·s) (up to 500 for holes at 300 K)
See also
References
Further reading
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- US patent 6831304, Takashi, U., "P-N Junction Type Boron Phosphide-Based Semiconductor Light-Emitting Device and Production Method thereof", issued 2004-12-14, assigned to Showa Denko
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