Strained silicon directly on insulator
From Infogalactic: the planetary knowledge core
Strained silicon directly on insulator (SSDOI) is a procedure developed by IBM which removes the silicon germanium layer in the strained silicon process leaving the strained silicon directly on the insulator. In contrast, strained silicon on SGOI provides a strained silicon layer on a relaxed silicon germanium layer on an insulator, as developed by MIT.[1]
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